发明名称 PHOTOMASK, EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a photomask which is transferred with the pattern in an effective pattern region and is capable of transferring dummy patterns to the circumference of an exposure object, an exposure device and an exposure method as well as a method for manufacturing a semiconductor device utilizing this photomask. SOLUTION: The photomask 200 has the effective pattern region 210 and the dummy pattern regions 220 disposed at least in part of the circumference of the effective pattern region 210. The dummy pattern regions 220 are formed along the outer circumference of the effective pattern region 210. A light shielding zone 230 is disposed between the effective pattern region 210 and the dummy pattern regions 220.</p>
申请公布号 JP2001235851(A) 申请公布日期 2001.08.31
申请号 JP20000047905 申请日期 2000.02.24
申请人 SEIKO EPSON CORP 发明人 KOJIMA KENJI;MORI KATSUMI
分类号 G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/302;(IPC1-7):G03F1/08 主分类号 G03F1/68
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