| 摘要 |
PROBLEM TO BE SOLVED: To prevent silicide from entering under a sidewall, when the silicide is formed on an MOSFET formed on an SOI substrate. SOLUTION: A groove is formed on the SOI substrate and a sidewall is formed thereon, so that the lower part of the sidewall has a structure protruding downwardly to the substrate. In this way, by making the silicide blocked so as not to get underneath a gate insulating film. Thus, gate resistance can be improved, gate leakage current can be lowered and suppression short channel effects is realized.
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