| 摘要 |
PROBLEM TO BE SOLVED: To reliably round the corner shape of a trench, and to improve the reliability of a device. SOLUTION: This manufacturing method of semiconductor devices includes a process that forms mask 3 for trench formation on the surface of a silicon substrate 1, a process that uses the mask 3 for forming a trench 4 on the silicon substrate 1, a process that uses the mask 3 for trench formation for generating nitrogen plasma in the same chamber and carries out control so that a small amount of nitrogen is introduced to the corner of the trench 4 for introducing nitrogen onto the wall surface of the trench, and a process that oxidizes the wall surface of the trench for forming an oxide film on the wall surface of the trench in a shape where the corner part is rounded.
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