| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for generating plasma which can be used suitably for film formation, etc., by etching or sputtering deposition in the manufacturing process of a semiconductor element, etc. SOLUTION: In this method of generating plasma in which a plasma is generated between a pair of plasma generating electrodes provided in a vacuum chamber for etching, etc., by applying a voltage across the electrodes, the plasma is generated by causing a potential to float so as to move electrons at least between the plasma generating electrodes at the time of generating the plasma near the electrodes.
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