发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treating device which can treat a substrate at a high throughput. SOLUTION: Cleaning equipment 1 which cleans wafers W is provided with a treating vessel 2 which houses the wafers W, a steam supplying means 4 which supplies steam 3 into the vessel 2, and an ozone supplying means 6 which supplies an ozone gas into the vessel 2. The equipment 1 is also provided with a heating means 7 which heats the wafers W housed in the vessel 2, a cool air supplying means 8 which supplies cool air, and a waste solution discharging means 10 which discharges droplets from the vessel 2.
申请公布号 JP2001237211(A) 申请公布日期 2001.08.31
申请号 JP20000000982 申请日期 2000.01.06
申请人 TOKYO ELECTRON LTD 发明人 KAMIKAWA YUJI;UENO KINYA
分类号 H01L21/302;H01L21/027;H01L21/304;H01L21/3065;(IPC1-7):H01L21/304;H01L21/306 主分类号 H01L21/302
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