| 摘要 |
PURPOSE: To accurately measure the positions of measuring marks without breaking edges, the objects to be measured, of the measuring marks on account of development and etching after exposure, in alignment precision measuring marks having measuring marks 1, 2, 3 and 4 of alignment precision which are formed on an exposure region 7 of a semiconductor wafer. CONSTITUTION: The plurality of alignment precision measuring marks 1, 2, 3 and 4 in one exposure region are arranged at positions which are not adjacent with each other in the adjacent exposure region 7. As a result the break of adjacent edges of the measuring marks 1, 2, 3 and 4 turning to measuring references which break is to be caused by development, etching, etc., is prevented.
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