发明名称 PLASMA TREATMENT APPARATUS AND TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To make it possible to solve a problem that a reactive product in plasma is attached to a surface of a probe, and a plasma characteristic can not be measured correctly in a conventional measuring technique, in which a DC voltage is applied to the probe for plasma characteristic measurement, a current carried from plasma is measured, and plasma characteristics are measured from the current/voltage characteristics. SOLUTION: The plasma treatment apparatus includes a probe mounted in plasma to be measured, a high frequency power supply for applying a high frequency to the plasma, a voltmeter for measuring the voltage in the probe, an ammeter for measuring the high frequency current carried in the probe, and a data processor for estimating the plasma characteristics from the high frequency current/voltage. By using the high frequency current/voltage characteristics instead of DC current/voltage characteristics, plasma measurement can be carried out with small influence from outer distrubance that is hardly affected by a disturbance in surface conditions of the probe.
申请公布号 JP2001237234(A) 申请公布日期 2001.08.31
申请号 JP20000048934 申请日期 2000.02.21
申请人 HITACHI LTD 发明人 TAMURA HITOSHI;KADOYA MASAHIRO;WATANABE SEIICHI
分类号 H01L21/302;H01L21/205;H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/302
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