METHOD OF FORMING NITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a nitride film by using a plasma enhanced chemical vapor deposition(PECVD) suitable for a plastic LCD substrate such that a nitride film of high quality having good stability and excellent dielectric characteristics can be formed on a LCD substrate at a low temperature (less than 225 deg.C). SOLUTION: A standard gas for the formation of a nitride film consisting of a nitrogen-containing gas and a silicon-containing gas in an almost same gas ratio as that of the gas conventionally used for the formation of a nitride film by PECVD at a high temperature (over 325 deg.C) is introduced into a chamber 16 while a flow of at least one kind of rare gas selected from elements in the second to sixth periods of the group 18 in the long-form period table into the chamber 16, so as to form a nitride film on a LCD substrate 12 by using PECVD. As for the rare gas, argon (Ar) is especially preferable, and Ne, Kr and Xe are preferable. Thus, a nitride film having 3 to 5 NH/SiH (measured by FT-IR) is obtained.