| 摘要 |
PROBLEM TO BE SOLVED: To provide an avalanche multiplying type semiconductor light receiving element, whose multiplication factor is high in a low-voltage operation, whose dark current is low at the same time and which is of high sensitivity, and to provide an avalanche multiplying type semiconductor light receiving element which removes the lattice matching condition of an optical absorption layer, and which can expand the range of a material for the optical absorption layer. SOLUTION: In a waveguide semiconductor light-receiving element, an avalanche multiplication layer 12 and optical absorption layers 14, 15 are provided on a semiconductor substrate 1, and one or both of the multiplication layer 12 and the optical absorption layers 14, 15 are sandwiched between a guide layer 11 and a guide layer 16. The concentration of carriers in the optical absorption layers 14, 15 is made higher than the concentration of carriers in the avalanche multiplying layer 12.
|
