| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor of a semiconductor device which uses an aluminum oxide Al2O3 as an etch barrier layer when removing a capacitor oxide film in manufacturing a MIM Ta2O5 capacitor. SOLUTION: The method of manufacturing a capacitor comprises a stage wherein an interlayer insulation film is formed on a substrate and then the interlayer insulation film is selectively removed to form a contact plug, a stage wherein the etch barrier layer is formed on the entire structure, a stage wherein the capacitor oxide film is formed on the etch barrier layer and then the capacitor oxide film is removed by etching using a capacitor mask to form a cylindrical structure, a stage wherein a metal layer for a lower electrode is formed on the entire structure having the cylindrical structure, a stage wherein after forming a gap filling film on the entire structure a part of the gap filling film and metal layer for a lower electrode above the capacitor oxide film are polished and then the gap filling film inside the cylindrical structure is removed, a stage wherein an exposed part of the capacitor oxide film is removed to form a cylindrical lower electrode, and a stage wherein a dielectric film and an upper electrode are formed on the entire structure. |
