| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film deposition method and an apparatus therefor capable of efficiently deposition a thin film having a desired composition with high reproducibility, and to provide an FTIR gas analyzer and a gaseous mixture feeder used for the thin film deposition method. SOLUTION: In this thin film deposition method by which plural organometallic gases G1, G2 and G3 are mixed in a gas mixing chamber 15, the gaseous mixture is fed in to a reaction chamber 22 and a thin film is deposited on a substrate 24 provided in the reaction chamber 22, the mixing ratios of the plural organometallic gases G1, G2 and G3 to be fed into the gas mixing chamber 15 are measured by using an FTIR gas analyzer 20 provided at the gas mixing chamber 15, and the flow rates of the organometallic gases G1, G2 and G3 are individually controlled based on the measured result.</p> |
