| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for formation which can be uniformly heated and can prevent a warpage from being generated, a nitride III-V compound layer formed using that substrate, and the manufacturing method of a nitride III-V compound substrate and a semiconductor element. SOLUTION: A substrate 10 for formation has a substrate main body 11 containing an additive 11a to enhance the absorption factor of radiant rays. As the mother material to constitute the main body 11, a saphire, a silicon carbide or a nitride III-V compound is used. As the material to constitute the additive 11a, gallium, aluminum, indium or boron is used. When the radiant rays are applied on the substrate 10, one part of the radiant rays is absorbed in the substrate 10 and the substrate 10 is uniformly heated with radiant heat generated by the absorption. As a result, a warpage in the substrate 10 is suppressed and a good quality of the nitride III-V compound film having little irregularity in its composition can be made to grow on the substrate 10. |
