FINE STRUCTURE DEVICE AND METHOD OF MANUFACTURING THE SAME, AND HIGH DENSITY MAGNETIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To eliminate the problem that, in a fine structure formation process, a hyperfine magnetic structure in a magnetic storage made tic having a density exceeding 100 Gbit/inch2 cannot be shrinked in size, while keeping the thickness sufficient for storage by a method wherein such processes as etching and liftoff are provided on an attached thin film. SOLUTION: A fine structure device 10 consists of an Si substrate 1 having projecting parts surrounded by a steep slope and fine structures 3 formed on the upper faces of the projecting parts. The Si substrate 1 has an unevenness on the surface. The projecting parts of the unevenness are surrounded by the steep slopes. The fine structures 3 are formed on the upper faces of the projecting part through a mask pattern 2. The mask pattern 2 is an oxide film pattern leaving the surface of the substrate as the projecting parts when forming the unevenness on the surface of the Si substrate 1 by, for example, as ECR chlorine plasma process.