| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for recovering damage of an oxide film at an edge of a thin film deposited partly on the oxide film. SOLUTION: In order to restore damage in the oxide film, a heat treatment is carried out after the process that causes the damage. While the surface of the oxide film is exposed as much as possible, the heat treatment is carried out under atmosphere of an inert gas like nitrogen gas, hydrogen gas, argon gas, the mixture or mixture containing several percentages of oxygen at not less than 800 deg.C, preferably at 950 deg.C or above for not less than 5 minutes, preferably 20 minutes or above.
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