| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing plasma damage and forming wiring easily in a manufacturing method of a semiconductor device. SOLUTION: After an interlayer insulating film is formed on a semiconductor substrate 1 on which a transistor and a protective diode are formed, a contact connected to the semiconductor substrate 1 is formed at the interlayer insulating film, and a conductive layer is formed on the interlayer insulating film. A wiring pattern is formed by a step for etching the conductive layer only in an elongated wiring direction through anisotropic etching in lithographic and plasma etching method and forming a first wiring pattern 2 with a described width, and a step for etching the first wiring pattern 2 only in the wiring widthwise direction, forming a second wiring pattern 2a, and removing the conductive layer in a region other than the wiring pattern on the interlayer insulating film. Then, plasma damage in formation of wiring can be reduced.
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