| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem, where it is especially severe for a device where an oxide layer is embedded substantially deep under a wafer surface, such as a vertical cavity surface radiation laser, related to a conventional method, in which the embedded oxide layer is accessed by mesa-etch, a non-flatness level of the wafer is deteriorated to cause following complex processes, and further, a large amount of removed substance causes the mechanical integrity of the device and to decrease increases its heat resistance. SOLUTION: A passive semiconductor structure 400 comprises a base layer, plural semiconductor layers which are formed on the base layer and comprise at least one semiconductor layer comprising oxidizable substance, and at least one hole, which extends from a top layer and enters at least one semiconductor layer comprising oxidizable substance. Since the substance between cavities etched remains as is, excellent mechanical integrity and thermal conductivity are maintained. |
