| 摘要 |
PROBLEM TO BE SOLVED: To form quantum dots of high uniformity. SOLUTION: On an InP (100)-made semiconductor substrate 2 an InP buffer layer 4 is grown, then a GaAsXSb1-X layer 6 (X=0.51) of 100 nm thickness is laminated on the buffer layer 4, using a first mixed crystalline semiconductor lattice-matched with InP, and since lattice mismatch factor for the layer 6 is 0.1% or smaller, its surface is a two-dimensionally flat surface. While the raw material of a group V element (i.e., As, Sb) supplied during growing of the GaAsXSb1-X layer 6 is supplied continuously without changing the quantity, only the raw material of a group III element is changed, i.e., the raw material Ga is changed to the raw material In, an InAsXSb1-X layer 8 is grown on the layer 6, using a second mixed crystal semiconductor, and thus quantum dots 10 are formed on the surface of the same layer due to lattice mismatch. |
