| 摘要 |
PROBLEM TO BE SOLVED: To suppress the diffusion of copper ions, and at the same time to improve the contact reliability between wiring in the copper wiring formation method of semiconductor elements. SOLUTION: In this wiring formation method of the semiconductor elements, four processes are successively carried out. Namely, the four processes include a process that forms lower copper wiring 204a where a lower part/a side and an upper surface are covered with first and second barrier films 203 an 205, respectively, in a first interlayer insulation 201 on a semiconductor substrate 200, a process that deposits a second interlayer insulting film 207 on the first interlayer insulation and forms a contact hole 208 to a wiring groove and the second barrier film 205, a process that forms a third barrier film 209 on a sidewall at the lower part of the contact hole 208 by depositing one part of the second barrier film 205 again when the cleaning of the contact hole 208 is made by argon sputtering, and a process that forms a fourth barrier film 210 inside the contact hole 208, and copper is filled for forming upper copper wiring.
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