发明名称 PIEZOELECTRIC ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a piezoelectric element, having a piezoelectric film with new structure that is superior in breakdown voltage characteristics, the manufacturing method of the piezoelectric film, and especially a manufacturing method for increasing the thickness of the film. SOLUTION: In the piezoelectric element, having a piezoelectric film 41 and a lower electrode 32 and an upper electrode, the piezoelectric film is formed by laminating a plurality of crystal layers 41a and 41b in the direction of film thickness, a boundary surface with a weak coupling between crystal grains is extended in the direction of the film thickness in each crystal layer, and a boundary surface with weak coupling in a certain crystal layer and the boundary surface with weak coupling in a crystal layer that is adjacent to it are formed discontinuously. The piezoelectric element is obtained by forming a piezoelectric precursor film containing an organic metal compound on the lower electrode 31, repeating a process for executing hydrothermal treatment to it for a plurality of times, and laminating the upper electrode on the plurality of piezoelectric films formed as a result of them.
申请公布号 JP2001237468(A) 申请公布日期 2001.08.31
申请号 JP20000044493 申请日期 2000.02.22
申请人 SEIKO EPSON CORP 发明人 SUMI KOJI;NISHIWAKI MANABU
分类号 B41J2/045;B41J2/055;H01L41/09;(IPC1-7):H01L41/09 主分类号 B41J2/045
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