| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-stage image pickup element and its manufacturing method, whereby the sensitivity, the saturated signal quantity and the handing charge quantity are increased by improving the conversion efficiency of an output circuit. SOLUTION: In the solid-state image pickup element, in which a plurality of photodetecting parts for photoelectrically converting incident lights into electrical signals, a floating diffused layer for receiving the electrical signals, and source-follower amplifiers having drive transistors and constant-current transistors for detecting the potential change in the floating diffused layer are integrated, the drive transistor of the source-follower amplifier has an insulation film covering the part of the gate electrode, including the gate electrode side face and a part of a drain region at the boundary between the gate electrode 12 and the drain region, and the drain region 13a underneath the insulation film has a relatively low impurity concentration region, compared with other drain regions 13b.
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