| 摘要 |
PROBLEM TO BE SOLVED: To form a very reliable ferroelectric film with a reduced leakage by eliminating a problem such as voids or unevenness which are generated in the ferroelectric film formed by applying a precursor solution. SOLUTION: A perovskite-crystallized ferroelectric is formed on a lower electrode. Then, a precursor of the ferroelectric film is applied and dried on the ferroelectric and a low temperature annealing is conducted at a temperature not higher than the perovskite crystallization temperature. After forming an upper electrode, a high temperature annealing is conducted at a temperature not lower than the perovskite crystallization temperature to completely crysatllize the ferroelectric film to form a semiconductor device held by electrodes.
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