发明名称 PLASMA PROCESSING SYSTEM AND METHOD FOR PROCESSING SUBSTRATE
摘要 PURPOSE: A plasma processing apparatus and a method for processing substrate are provided to measure precisely and stably for a long time without lowering transparency of a measurement port for measuring the light emission from the plasma. CONSTITUTION: In the plasma processing apparatus in which a specimen W is processed by generating plasma(P) inside a process chamber(100), a plurality of penetrating holes(115B) are formed by densely penetrating a plate(115) arranged on a UHF antenna(111) which is positioned facing to the specimen, and an optical transmitting member(141) is arranged so as to almost contact the backside of the penetrating holes(115B), while an optical transmitting means(115) is arranged on the other end of the optical transmitting member(141) to measure optical information from the specimen(W) and the plasma by a measurement device(152) via the optical transmitting member(141) and the optical transmitting means(151). Since, even throughout the discharge for a long time, no anomalous discharge nor foreign substance is generated at the penetrating holes(115B) and no degradation in optical performance at the end of the optical transmitting member(141) occurs, surface of the specimen(W) and status of the plasma can be measured precisely and stably for a long period of time.
申请公布号 KR20010083202(A) 申请公布日期 2001.08.31
申请号 KR20010008517 申请日期 2001.02.20
申请人 发明人
分类号 H01L21/3065;H01J37/32;H01L21/00;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
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