| 摘要 |
<p>The field effect transistor of the present invention includes a body diffusion region (201) having a source diffusion (203) region therein. The field effect transistor further includes a metal source contact (208) adjacent the body diffusion region (201) and the source diffusion region (203). The metal source contact (208) forms a Schottky type contact with the body diffusion region (201).</p> |
