| 摘要 |
A method of substrate temperature control for plasma processing apparatus in which a substrate which is being held on a substrate holder in a process chamber is being processed, and He gas is passed through the gap between the substrate and the substrate mounting surface during the processing of the substrate, the substrate temperature is controlled by the thermal transfer characteristics of the gas and the substrate is cooled to the prescribed temperature, and the pressure of the He gas is preset by a pressure setting part 50a, the actual pressure is measured with a pressure gauge 49, and the gas flow rate is controlled in such a way that the measured pressure becomes equal to the set pressure by a pressure control valve 46. Furthermore, the substrate temperature controllability is assessed by monitoring the gas flow rate with a substrate temperature controllability assessment part 50b.
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