发明名称 ACTIVE MATRIX SUBSTRATE PLATE AND MANUFACTURING METHOD THEREFOR
摘要 PURPOSE: An active matrix substrate plate is provided to be produced with good yield and superior properties using a lesser number of manufacturing steps and its manufacturing methods. CONSTITUTION: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line(11) and the gate electrode(12) extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section(Tf). In step 3, the transparent conductive layer(40) and the metallic layer are laminated, and the signal line(31), the drain electrode(32) extending from the signal line, a pixel electrode(41) and the source electrode(33) extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap(23) is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
申请公布号 KR20010082609(A) 申请公布日期 2001.08.30
申请号 KR20000083299 申请日期 2000.12.27
申请人 NEC CORPORATION 发明人 DOI SATOSHI;HAMADA TSUTOMU;HARANO TOSHIHIKO;HAYASE TAKASUKE;IHARA HIROFUMI;IHIDA SATOSHI;KIDO SHUSAKU;KIMURA SHIGERU;KUROHA SHOICHI;MAEDA AKITOSHI;NAKATA SHINICHI;SHIMODOUZONO HISANOBU;TAKECHI KAZUSHIGE;TANAKA HIROAKI;UCHIDA HIROYUKI;WATANABE TAKAHIKO;YOSHIKAWA TAE
分类号 G02F1/1343;G02F1/136;G02F1/1368;G09F9/30;H01L21/00;H01L21/3205;H01L21/336;H01L21/84;H01L23/52;H01L29/423;H01L29/43;H01L29/49;H01L29/786;H01L31/036;(IPC1-7):G02F1/136 主分类号 G02F1/1343
代理机构 代理人
主权项
地址