| 摘要 |
PURPOSE: To provide a semiconductor memory which can output first serial data read out by burst as early as possible even if capacity of a memory cell array is increased. CONSTITUTION: Serial data of plural bits are read out as burst from a memory sub-array constituted of memory cell arrays 11Uo, 11Ue or memory cell arrays 11Le, 11Lo with one time address access. As serial data read out first independently of an operation mode of a semiconductor memory is bit 0, individual memory sub-array is divided into sub-array for even/for odd, memory cell arrays 11Ue, 11Le of an even side in which data of bit 0 is stored is arranged nearer a data amplifier than memory cell arrays 11Uo. 11Lo of an odd side. Thereby, the maximum length of an I/O line used for reading out data of an even side is made approximately half of the maximum length of an I/O line used for reading out data of an odd side.
|
