发明名称 Optimized low leakage diodes, including photodiodes
摘要 A photodiode for use in an imager having an improved charge leakage. The photodiode has a doped region that is spaced away from the field isolation to minimize charge leakage. A second embodiment of invention provides a second implant to improve charge leakage to the substrate. The photodiodes according to the invention provide improve charge leakage, improved reactions to dark current and an improved signal to noise ratio. Also disclosed are processes for forming the photodiode.
申请公布号 US2001017382(A1) 申请公布日期 2001.08.30
申请号 US20010780390 申请日期 2001.02.12
申请人 RHODES HOWARD E.;JUENGLING WERNER;FIGURA THOMAS A.;CUMMINGS STEVEN D. 发明人 RHODES HOWARD E.;JUENGLING WERNER;FIGURA THOMAS A.;CUMMINGS STEVEN D.
分类号 H01L27/146;H01L27/148;H01L29/861;(IPC1-7):H01L27/148;H01L29/768;H01L31/062;H01L31/113 主分类号 H01L27/146
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