发明名称 METHOD FOR PRODUCING A FERROELECTRIC LAYER
摘要 The invention relates to a method for producing a ferroelectric layer. According to the invention, the application of an outer electrical field facilitates the crystallisation of the material in accordance with a predetermined direction. In this way, it is possible to produce ferroelectric layers whose domains are preferably aligned in such a way that their polarisation vectors are positioned perpendicularly to the electrodes of the storage capacitor in a storage cell. As a result, the overall polarisation vector for the domains runs essentially parallel to the field of the storage capacitor while the storage device is in operation and the polarisation produced has a correspondingly high level of remanence. The level of the signal that can be read out of the storage capacitors is also correspondingly high.
申请公布号 WO0163658(A1) 申请公布日期 2001.08.30
申请号 WO2001EP02035 申请日期 2001.02.22
申请人 INFINEON TECHNOLOGIES AG;CERVA, HANS;HINTERMAIER, FRANK;SCHINDLER, GUENTHER;WINTERAUER, FRANZ;HARTNER, WALTER;HOEPFNER, JOACHIM;WEINRICH, VOLKER 发明人 CERVA, HANS;HINTERMAIER, FRANK;SCHINDLER, GUENTHER;WINTERAUER, FRANZ;HARTNER, WALTER;HOEPFNER, JOACHIM;WEINRICH, VOLKER
分类号 H01L21/02;H01L21/314;H01L21/316;H01L21/8246;H01L27/115 主分类号 H01L21/02
代理机构 代理人
主权项
地址