发明名称 Method of fabricating an array substrate
摘要 An array substrate for use in an X-ray sensing device and in an LCD device is fabricated using plasma gas treatment. Especially, an indium-tin-oxide (ITO) transparent conductive metallic layer is plasma-treated by N2 plasma, He plasma or Ar plasma, before forming the insulation layer on the ITO transparent conductive metallic layer. Thus, the plasma removes the impurities on a surface of the transparent conductive metallic layer and changes the lattice structure of the surface of the transparent conductive metallic layer, and thus the adhesion between the transparent conductive metallic layer and the insulation layer is improved. The defects caused by a gap or a space between the transparent conductive metallic layer and the insulation layer do not occur.
申请公布号 US2001018238(A1) 申请公布日期 2001.08.30
申请号 US20010793103 申请日期 2001.02.27
申请人 KIM DONG-HEE 发明人 KIM DONG-HEE
分类号 H01L29/786;G02F1/1343;H01L27/146;(IPC1-7):H01L21/339;H01L21/00 主分类号 H01L29/786
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