| 摘要 |
Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.
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