Method for connecting substrates of a vertical, integrated circuit structure partitions a top substrate into a first subpart with a metallizing structure and a second silicon subpart with a circuit structure.

摘要

A top substrate (1) is partitioned into a first subpart (13) with a metallizing structure and a second silicon subpart (14) with a circuit structure. The metallizing structure contains metal strips (3) and source (4), gate (5) and drain (6) transistor connectors fitted contiguously on the silicon subpart corresponding to a transistor structure.