| 摘要 |
<p>Disclosed is a microwave element which comprises a silicon substrate, a porous silicon dioxide column formed on the silicon substrate, a silicon column supported by the silicon substrate and having a height identical with that of the porous silicon dioxide column, an active element formed on the silicon column, and a passive element formed on the porous silicon dioxide column and connected to the active element. According to the present invention, elements that have very small signal loss in the microwave ranges over 1GHz can be implemented by using the silicon substrate that has excellent thermal conduction, flatness and is cheap compared to the aluminum substrate.</p> |
