MIXED MODE MULTI-LEVEL MEMORY

摘要

A memory device (300) having a plurality of memory cells (302, 304) that are grouped into at least two groups of cells (302, 304). Each cell (302, 304) is capable of being programmed in at least two modes. A mode indicator is associated with each group of cells (302, 304). The mode indicator (306, 308) indicates which programming mode is used to access the cells (302, 304). The mode indicator (306, 308) is one or more bits and optionally is user selectable.