发明名称 |
Developing process, process for forming pattern and process for preparing semiconductor device using same |
摘要 |
By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an alpha-methyl styrene compound and an alpha-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.
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申请公布号 |
US2001018166(A1) |
申请公布日期 |
2001.08.30 |
申请号 |
US20010793578 |
申请日期 |
2001.02.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJINO ATSUKO;KUMADA TERUHIKO;OSHIDA ATSUSHI;TANGE KOJI;FUKUMA HITOSHI |
分类号 |
H01L21/027;G03F7/32;(IPC1-7):G03F7/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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