| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
PURPOSE: To provide a highly selective Ru(ruthenium) etching technique, using a photoresist as an etching-resistant mask. CONSTITUTION: An Ru film 30, deposited on the sidewalls and bottoms of holes 27 as a lower electrode material, is removed from the outside of the holes 27 by isotropic dry etching in a gaseous atmosphere containing ozone gas, after the Ru film 30 formed in the holds 27 is covered with a photoresist film 31.
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| 申请公布号 |
KR20010082607(A) |
申请公布日期 |
2001.08.30 |
| 申请号 |
KR20000082927 |
申请日期 |
2000.12.27 |
| 申请人 |
HITACHI, LTD. |
发明人 |
ARAI TOSHIYUKI;IZAWA MASARU;NAKAHARA MIWAKO;NAKAMURA YOSHITAKA;NOJIRI KAZUO;OONO SHIGERU;SAEKI TOMONORI;TSUNEKAWA SUKEYOSHI;YUNOGAMI TAKASHI |
| 分类号 |
H01L21/302;C23F4/00;H01L21/02;H01L21/3065;H01L21/3213;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
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