发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD
摘要 <p>An LSI which includes multilayer wirings connected through a conductive via or contact embedded in an interlayer insulating film. The LSI has a wiring pattern in which a wiring layer on at least one level constituting the multilayer wirings includes a first wiring connected to the via or contact and a second wiring arranged in parallel to the first wiring, and which has a C-shaped wiring section where the wiring spacing between the first and the second wiring is more than the spacing between the via or contact and the second wiring. Therefore the wiring density is uniform, the operating speed of the LSI is high, and the power consumption thereof is low. Furthermore, by using a computer the layout of the wiring pattern can be automatically changed without changing the position of the via or contact, performing redesign of the wiring layer of a specific level in a short time without much design change.</p>
申请公布号 WO2001063673(P1) 申请公布日期 2001.08.30
申请号 JP2000001001 申请日期 2000.02.22
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