发明名称 METHOD AND APPARATUS FOR DEPOSITING FILMS
摘要 A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.
申请公布号 WO0163000(A2) 申请公布日期 2001.08.30
申请号 WO2001US04563 申请日期 2001.02.14
申请人 TOKYO ELECTRON LIMITED;JOHNSON, WAYNE 发明人 JOHNSON, WAYNE
分类号 C23C14/34;C23C14/35;C23C14/40;H01J37/32;H01J37/34;(IPC1-7):C23C14/00 主分类号 C23C14/34
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