| 摘要 |
PURPOSE: Disclosed is a large-integration, high-speed, and reliable multi-storage-type non-volatile memory. CONSTITUTION: In the semiconductor integrated circuit, a memory transistor(Trmc) having a gate-insulating film(2) discretely including a trap and a memory gate electrode(7) is provided, and switch transistors(Trsw) having switch gates(6-1¯6-2) are provided at both the side of the memory transistor. The gate- insulating film(2) discretely including the trap has a discrete trap for storing information charge, carriers can be locally injected, and one memory cell forms a multi-storage cell for accumulating information of at least two bits. The switch transistor(Trsw) having the switching gate electrodes achieves a source side injection system. The memory transistor is formed in self-alignment manner with it. The memory gate electrode(7) of the memory transistor is connected to a word line(5), and erasure in word line units can be made.
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