| 摘要 |
<p>A method for preparing a silicon single crystal, characterized in that the single crystal (8) is prepared by the MCZ method, and the flow rate of an inert gas flowed through a growing furnace (1) during the growth of a silicon single crystal and/or the pressure inside the growing furnace (1) are changed depending on the rate of the amount of the single crystal (8) being pulled up, to thereby control the concentration of the interstitial oxygen in the single crystal. The change of the flow rate or pressure of an inert gas in the growing furnace (1) permits controlling with ease the amount of oxygen which distills as an oxide from the surface of a melt in the vicinity of the interface where the crystal is growing, which leads to the control of the amount of oxygen contained in the silicon melt (10) with ease.</p> |
