| 摘要 |
A semiconductor device includes a first insulating film, a first conductive layer, a gate insulating film and a gate electrode. The first insulating film is formed on inner walls other than a top portion of each of grooves which are formed in a surface of a semiconductor substrate. The top portion is near to the surface of the semiconductor substrate. The first conductive layer is formed to fill a concave portion to the surface of the semiconductor substrate and to having a portion extending from the top portion into a portion of the semiconductor substrate. The concave portion is formed by the first insulating film in each of the grooves, and the first conductive layers function as source and drain regions. The gate insulating film is formed to cover the first conductive layer and the semiconductor substrate. The gate electrode is formed on the gate insulating film to form a MOS transistor.
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