发明名称 Semiconductor device and method for fabricating same
摘要 A top surface of a LSI chip having a structure of a bare chip is provided with bumps, and a protective resin is provided for at least side surfaces of the LSI chips. The LSI chip is prevented from being chipped off or cracked because of protective resin provided for the side surfaces of the LSI chip. The invention provides a semiconductor device and a method for fabricating the same, in which the chip or a package thereof is prevented from being damaged, and thereby yield rate of the semiconductor device can be heightened. Since the numbers of the parts of the semiconductor device and the steps of using jigs and tools necessary for the fabrication process are reduced, fabricating cost of the semiconductor device can be cut down.
申请公布号 US2001018229(A1) 申请公布日期 2001.08.30
申请号 US20010784490 申请日期 2001.02.15
申请人 NBC CORPORATION 发明人 KATO YOSHIMASA;TAGO MASAMOTO
分类号 H01L23/29;H01L21/301;H01L21/56;H01L21/60;H01L21/68;H01L23/12;H01L23/16;H01L23/31;(IPC1-7):H01L21/44;H01L21/48;H01L21/50;H01L21/46;H01L21/78;H01L23/28 主分类号 H01L23/29
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