发明名称 |
Process of manufacturing a dynamic random access memory device |
摘要 |
A dynamic random access memory device formed in a substrate having a trench. The trench has a side wall, a top, a lower portion, and a circumference. The device includes a signal storage node including a storage node conductor formed in the lower portion of the trench and isolated from the side wall by a node dielectric and a collar oxide above the node dielectric. A buried strap is coupled to the storage node conductor and contacts a portion of the side wall of the trench above the collar oxide. A trench-top dielectric which is formed upon the buried strap has a trench-top dielectric thickness. A signal transfer device includes a first diffusion region extending into the substrate adjacent the portion of the trench side wall contacted by the buried strap, a gate insulator having a gate insulator thickness formed on the trench side wall above the first buried strap, wherein the gate insulator thickness is less than the trench-top dielectric thickness, and a gate conductor formed within the trench upon the trench-top dielectric and adjacent the gate insulator.
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申请公布号 |
US2001018247(A1) |
申请公布日期 |
2001.08.30 |
申请号 |
US20010824896 |
申请日期 |
2001.04.03 |
申请人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KANARSKY THOMAS S.;WELSER JEFFREY J. |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KANARSKY THOMAS S.;WELSER JEFFREY J. |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824;H01L21/336 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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