| 摘要 |
MOSFET comprising: a first semiconductor region formed in the semiconductor substrate on which the MOSFET is to be integrated, said region being defined in said semiconductor substrate by n+-type doping, a thin and short semiconductor channel being arranged perpendicular with respect to said substrate, said channel being in homo-epitaxial alignment with said first semiconductor region, a gate oxide layer formed on said semiconductor channel, a second semiconductor region formed at the opposite end of said semiconductor channel, said region being n+ doped and in homo-epitaxial alignment with said semiconductor channel, at least one gate electrode arranged between said first and second semiconductor regions such that it is separated from said semiconductor gate channel by a gate oxide layer, said first semiconductor region serving as drain and said second semiconductor region serving as source, or vice versa.
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