| 摘要 |
A semiconductor integrated circuit device can be produced at a reduced cost, when a line circuit pattern of longitudinal and transverse lines is to be formed, by phase-disposing open patterns such that the phase between adjoining open patterns is reversed, extracting the phase conflict of type A where in-phase patterns are close to each other and the phase conflict of type B where opposite-phase patterns contact each other, producing a conflict canceling pattern for canceling these conflicts, multiple-exposing a phase mask having the conflict canceling pattern and a complementary phase mask having a pattern designed complementarily thereto to light on the same substrate, whereby a huge and random circuit pattern having a fine pitch, realization of which has heretofore been considered to be difficult with the conventional projection printing method, is made obtainable by multiple-exposure to light using at most two phase shift masks, and such circuit patterns can be designed in a short time and the semiconductor integrated circuit device can be produced at low cost. |
