| 摘要 |
PURPOSE: To provide a semiconductor storage in which increasing circuit area can be prevented while being provided with a burn-in test function by which initial defect can be screened surely. CONSTITUTION: When either of a pair of dummy word lines DWL0, DWL1 arranged in a memory cell array is selected, minute potential difference is generated between bit lines BLZ and BLX by capacitive coupling between the dummy word lines DWL0, DWL1 and the bit lines BLZ, BLX. Stress voltage is supplied to the bit lines BLZ, BLX by amplifying minute potential difference by a sense amplifier 6.
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