POSITIVE PHOTORESIST COMPOSITION

摘要

PURPOSE: To provide a positive photoresist composition which does not cause development defects when far UV, particularly KrF excimer laser light is used as a light source for exposure and has superior stability in a semiconductor producing process. CONSTITUTION: The positive photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B) an alkali-insoluble or slightly alkali-soluble resin which is made alkali-soluble by the action of the acid, (C) a carboxylic acid anhydride having a molecular weight of > 1,000, (D) a nitrogen-containing basic compound and (E) a fluorine- and/or silicon-containing activator.