发明名称 METHOD OF DEVELOPING WAFER
摘要 PURPOSE: A method of developing a wafer is to prevent generation of pattern collapse phenomena, while maintaining a thickness of a photoresist. CONSTITUTION: When a wafer(21) is placed in a development apparatus, a developing solution is uniformly sprayed on the wafer, while rotating it. The rotation of the wafer is stopped and kept for a prescribed development time to develop the wafer. The wafer is then dipped into a water bath(26) including a rinse solution(25) and is rotated in the bath to remove a residue remaining thereon. The rinsed wafer is taken out of the water bath and then baked in a bake oven to remove the rinse solution.
申请公布号 KR20010081849(A) 申请公布日期 2001.08.29
申请号 KR20000008029 申请日期 2000.02.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, JUNG IL
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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