摘要 |
PURPOSE: A power-up circuit of a DRAM using internal voltage is provided to set a power-up signal by an external voltage VPERI and reset the power-up signal by an internal voltage VDD. CONSTITUTION: A bias signal generator(21) generates a bias signal determined according to an external voltage VDD. A signal setting portion(22) sets an initial power-up signal by using a bias signal generated from an external voltage VPERI. An internal voltage level detector(23) detects a level of the internal voltage and outputs the detected signal. A signal resetting portion(24) resets the power-up signal when the detected internal voltage level becomes a predetermined level. A latch portion(25) latches the set power-up signal or the reset power-up signal. An output portion(26) outputs the latched power-up signal.
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