| 发明名称 |
Semiconductor device having an inductor |
| 摘要 |
<p>The first shield pattern (5b) is provided between an inductor (14b) and the surface of a semiconductor substrate (1) under the inductor. The first shield pattern (5b) has plural concave slittings (15) from the side of the edge toward the inside. The second shield pattern (8d) provides a convex area which is located on the surface of the semiconductor substrate (1) in correspondence with the slitting (15) wherein metallic silicide is formed and a connection area which is provided on the surface of the semiconductor substrate (1) and in which metallic silicide is formed for connecting plural convex areas. <IMAGE></p> |
| 申请公布号 |
EP1128416(A2) |
申请公布日期 |
2001.08.29 |
| 申请号 |
EP20010103331 |
申请日期 |
2001.02.13 |
| 申请人 |
NEC CORPORATION |
发明人 |
FUJII, HIROKI |
| 分类号 |
H01F27/36;H01F17/00;H01L21/02;H01L21/3205;H01L21/822;H01L21/8234;H01L23/52;H01L27/04;H01L27/06;H04B15/00;H05K9/00;(IPC1-7):H01L21/02 |
主分类号 |
H01F27/36 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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