| 摘要 |
PURPOSE: An ion implantation filter for forming a pattern is provided to simplify an ion implantation process largely and to reduce a process cost and a process time, by performing an ion implantation only onto a specific region on a wafer by fabricating an ion implantation mask where additional partial patterns independent of the wafer are formed. CONSTITUTION: The ion implantation filter includes the first partial pattern filter(11) which is formed in the first pattern type on a part of the first substrate and where the first transmission part passing an ion beam(IB) is formed, and the second partial pattern filter which is formed in the second pattern type not overlapped with the first pattern and where the second transmission part passing the ion beam is formed. The first and the second transmission part has a shape where the first and the second partial pattern filter can endure a heat and an impact by the ion beam. A wafer(10) is formed with a wafer, a tungsten or a metal alloy. The number of the partial pattern filters is equal to the number of ion beam irradiation. The ion beam passing the first and the second transmission part forms an ion-doping region on the wafer.
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